'System on a chip' technology platform for 0.18 /spl mu/m digital, mixed signal and eDRAM applications
- Resource Type
- Conference
- Authors
- Mahnkopf, R.; Allers, K.-H.; Armacost, M.; Augustin, A.; Barth, J.; Brase, G.; Busch, R.; Demm, E.; Dietz, G.; Flietner, B.; Friese, G.; Grellner, F.; Han, K.; Hannon, R.; Ho, H.; Hoinkis, M.; Holloway, K.; Hook, T.; Iyer, S.; Kim, P.; Knoblinger, G.; Lemaitre, B.; Lin, C.; Mih, R.; Neumueller, W.; Pape, J.; Prigge, O.; Robson, N.; Rovedo, N.; Schafbauer, T.; Schiml, T.; Schruefer, K.; Srinivasan, S.; Stetter, M.; Towler, F.; Wensley, P.; Wann, C.; Wong, R.; Zoeller, R.; Chen, B.
- Source
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :849-852 1999
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Copper
MIM capacitors
Metal-insulator structures
Random access memory
Isolation technology
Microelectronics
MOSFET circuits
Power MOSFET
Power lasers
Fuses
- Language
A 0.18 /spl mu/m high performance/low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effective-manner for mixed signal as well as for eDRAM applications offering a maximum of flexibility for product designers. For mixed signal applications a precision metal-insulator-metal capacitor (MIMCAP) was developed. This is for the first time a realization of a metal-insulator-metal capacitor in a copper dual damascene metallization scheme.