60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology
- Resource Type
- Conference
- Authors
- Ellinger, F.; Morf, T.; Buren, G.; Kromer, C.; Sialm, G.; Rodoni, L.; Schmatz, M.; Jackel, H.
- Source
- 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Microwave symposium digest Microwave Symposium Digest, 2004 IEEE MTT-S International. 3:1329-1332 Vol.3 2004
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
CMOS technology
Voltage-controlled oscillators
Wideband
Very large scale integration
Circuit optimization
Tuning
Frequency
MOSFET circuits
Varactors
MMICs
- Language
- ISSN
- 0149-645X
A 60 GHz cross-coupled differential LC CMOS VCO is presented in this paper, which is optimized for a large frequency tuning range using conventional MOSFET varactors. The MMIC is fabricated on digital 90 nm SOI technology and requires a circuit area of less than 0.1 mm/sup 2/ including the 50 /spl Omega/ output buffers. Within a frequency control range from 52.3 GHz to 60.6 GHz, a supply voltage of 1.5 V and a supply current of 15 mA, the circuit dividers a very constant output power of -6.8 /spl plusmn/ 0.2 dBm and yields a phase noise between -85 to -92 dBc/Hz at 1 MHz frequency offset.