Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model
- Resource Type
- Conference
- Authors
- Mo, Fei; Xiang, Jiawen; Mei, Xiaoran; Sawabe, Yoshiki; Saraya, Takuya; Hiramoto, Toshiro; Su, Chun-Jung; Hu, Vita Pi-Ho; Kobayashi, Masaharu
- Source
- 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
- Subject
- Bioengineering
Computing and Processing
Photonics and Electrooptics
Power, Energy and Industry Applications
Solid modeling
Low voltage
Three-dimensional displays
Process control
Switches
Very large scale integration
Logic gates
- Language
- ISSN
- 2158-9682
We have investigated and revealed the critical role of GIDL current for efficient erase operation in 3D vertical FeFET by developing proper test structures and demonstrated a compact long-term FeFET retention model based on nucleation-limited switching, for the first time. We also proposed novel FeFET process for low voltage operation by controlling oxygen intrusion into the gate stack. This work contributes to the realization of high-density and low-power 3D vertical FeFET.