1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration
- Resource Type
- Conference
- Authors
- Spulber, O.; Sweet, M.; Vershinin, K.; Luther-King, N.; Sankara-Narayanan, E.M.; De Souza, M.M.; Flores, D.; Millan, J.
- Source
- ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. Power semiconductor devices and IC's Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on. :345-348 2003
- Subject
- Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Insulated gate bipolar transistors
Fabrication
Anodes
Cathodes
Voltage
Wet etching
Costs
Thyristors
Protection
Electrons
- Language
Novel 1.7kV NPT V-groove Trench CIGBT structures have been fabricated using an inexpensive wet etch technology for the trench gates. This approach can significantly reduce the costs inherent in the case of a conventional RIE. Experimental results show current saturation and short-circuit capability. Moreover, the V-groove CIGBT can be switched off without any additional circuit.