Measurement and Modeling of Frequency Degradation of an oTFT Ring Oscillator
- Resource Type
- Conference
- Authors
- Saito, Michiaki; Shintani, Michihiro; Kuribara, Kazunori; Ogasahara, Yasuhiro; Sato, Takashi
- Source
- 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-3 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Organic thin film transistors
Degradation
Frequency measurement
Voltage measurement
Current measurement
- Language
Organic thin lm transistors (oTFTs) and a ring oscillator (RO) are fabricated to model their temporal degradations. The changes of threshold voltage and mobility parameters are first extracted for n-type and p-type oTFTs through fitting to the measured current characteristic. Then, the aging of the oscillation frequency of organic RO circuits are simulated to compare with the measurement results. The simulation results well captured degradation trend of the measurement result.