Electrical Analysis of Wafer-to-Wafer Copper Hybrid Bonding at Sub-Micron Pitches
- Resource Type
- Conference
- Authors
- Ryan, K.; Netzband, C.; Gildea, A.; Mimura, Y.; Hoshino, S.; LeFevre, S.; Tuchman, A.; Son, I.; Aizawa, H.; Maekawa, K.
- Source
- 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2023 IEEE 73rd. :114-117 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Contacts
Electronic components
Packaging
Copper
Bonding
Next generation networking
Cu hybrid bonding
fine pitch
heterogenous integration
wafer-to-wafer (W2W)
face-to-face
3D advanced packaging
- Language
- ISSN
- 2377-5726
Multi-level back-end-of-line (BEOL) test vehicles have been produced to evaluate the performance of the Tokyo Electron (TEL) wafer-to-wafer (W2W) bonding tool platform. The designed hybrid bonding pad pitches are 1um and 0.5um which represent current and next-generation pitch technologies respectively. Step height variation induced by via level pattern density was transferred to the bonding pad layer and caused voids at the bonding interface. The integration of a dual damascene process for the via and bonding pad layers significantly reduced this step height which enabled electrical contact on larger via chain macros for evaluation.