Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-μm Waveband
- Resource Type
- Periodical
- Authors
- Mereuta, A.; Nechay, K.; Caliman, A.; Suruceanu, G.; Rudra, A.; Gallo, P.; Guina, M.; Kapon, E.
- Source
- IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 25(6):1-5 Jan, 2019
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power generation
Temperature measurement
Mirrors
Heating systems
Flip-chip devices
Vertical cavity surface emitting lasers
Lasers
diode pumped
optical pumping
semiconductor lasers
vertical emitting lasers
- Language
- ISSN
- 1077-260X
1558-4542
Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 μm wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors fixed on a diamond heat-sink substrate in a flip-chip geometry, incorporated in a V-cavity configuration. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11°C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. This demonstration represents more than five-fold increase of the output power compared to the state-of-the-art flip-chip VECSELs previously reported at the 1.55 μm wavelength range. It opens new perspectives for developing practical VECSEL-based laser systems operating at a wavelength range widely used in many applications.