PBTI/NBTI monitoring ring oscillator circuits with on-chip Vt characterization and high frequency AC stress capability
- Resource Type
- Conference
- Authors
- Kim, Jae-Joon; Rao, Rahul M.; Schaub, Jeremy; Ghosh, Amlan; Bansal, Aditya; Zhao, Kai; Linder, Barry P.; Stathis, James
- Source
- 2011 Symposium on VLSI Circuits - Digest of Technical Papers VLSI Circuits (VLSIC), 2011 Symposium on. :224-225 Jun, 2011
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Signal Processing and Analysis
Stress
Logic gates
Degradation
Frequency measurement
Stress measurement
System-on-a-chip
Monitoring
- Language
- ISSN
- 2158-5601
2158-5636
We propose a new ring oscillator (RO) structure to monitor NBTI and PBTI effects separately. In addition, the unique circuit topology makes it possible to directly correlate the RO frequency degradation to transistor threshold voltage (Vt) degradation without relying on compact modeling with device parameters extracted from transistor-level measurements. It also enables high-speed (> GHz) AC BTI stress experiment with accompanying on-chip AC stress circuitry. The validity of the circuit concept is confirmed by measurements from a test chip in a high-k/metal gate SOI CMOS technology.