High density plasma etch induced damage to thin gate oxide
- Resource Type
- Conference
- Authors
- Krishnan, S.; Aur, S.; Wilhite, G.; Rajgopal, R.
- Source
- Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :315-318 1995
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Plasma applications
Plasma density
Etching
Plasma devices
Monitoring
Testing
Fuses
Differential amplifiers
Voltage
Plasma sources
- Language
- ISSN
- 0163-1918
We report here severe charging caused by an inductively coupled plasma (ICP) etch, a high density plasma tool, on devices targeted for the 0.35 /spl mu/m technology mode. For the first time, direct evidence of a bi-directional charging mechanism is provided. Differential amplifiers connected to antennae exhibit offset voltage increase up to 300 mV. The lifetime of a nominal device in the presence of ICP charging is shown to reduce by a decade. Reported here for the first time is the immunity of SOI devices to such severe charging environments.