Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature
- Resource Type
- Periodical
- Authors
- Zhang, Y.; Chen, Y.; Qiu, L.; Xu, J.; Luo, C.; Guo, G.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3525-3531 Jun, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Tunneling
Silicon-on-insulator
Substrates
Junctions
Cryogenics
Qubit
Modulation
Characterization
cryogenic
lateral bipolar junction transistors (LBJTs)
modeling
silicon-on-insulator (SOI)
substrate modulation
tunneling
- Language
- ISSN
- 0018-9383
1557-9646
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ( ${\beta }$ ). In this article, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator (SOI) wafers down to liquid helium temperature (4 K). The positive SOI substrate bias greatly increases the collector current and has a negligible effect on the base current, thus significantly alleviating ${\beta }$ degradation at low temperatures. We present a physical-based compact LBJT model for 4 K simulation, in which the collector current ( ${I}_{\textbf {C}}$ ) consists of the tunneling current and the additional current component near the buried oxide (BOX)/silicon interface caused by the substrate modulation effect. This model is able to fit various characteristics of LBJTs well and has promising applications in amplifier circuits simulation for silicon-based qubits signals.