A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
- Resource Type
- Conference
- Authors
- Begon-Lours, Laura; Halter, Mattia; Pineda, Diana Davila; Popoff, Youri; Bragaglia, Valeria; Porta, Antonio La; Jubin, Daniel; Fompeyrine, Jean; Offrein, Bert Jan
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Fabrication
Electrodes
Nonvolatile memory
Neural networks
Memristors
Linearity
Switches
Ferroelectric
Memristor
Resistive Switching
- Language
A Ferroelectric Analog Non-Volatile Memory based on a WO x electrode and ferroelectric HfZrO 4 layer is fabricated at a low thermal budget (~375°C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation