This work presents a fully-integrated electronic-photonic mm-wave sensing element, fabricated in a commercial 45 nm SOI process. The sensing element features a low-noise amplffier (LNA) tuned to drive an integrated electro-optical microring modulator (MRM) instead of conventional Mach-Zehnder modulator (MZM) with a large footprint. With sensing element power of only 30mW and area of 0.6m$\mathrm{m}^{2}$, the design enables compact, low-power mm-wave sensor arrays with thousands of elements, paving the way to new distributed sensing and cellfree radio architectures. The mm-wave sensing element reaches a sideband conversion efficiency (SCE) saturation point at around -35dBm of received RF power, and achieves a peak SCE of 49.5 dB with -45dBm received RF power and incident laser power up to 4dBm over 2GHz of RF bandwidth centered at 57GHz, which projects to a link noise figure of 20. 6dB with 9 dBm total laser power.