An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model
- Resource Type
- Conference
- Authors
- Albasha, L.; Johnson, R.G.; Snowden, C.M.; Pollard, R.D.
- Source
- Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :471-474 1997
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electric breakdown
HEMTs
MODFETs
MESFETs
Temperature
Tunneling
Equations
Gate leakage
Thermal resistance
Microwave photonics
- Language
This paper presents a physical model and experimental validation for the breakdown process in HEMTs and MESFETs. The model is integrated into a fast quasi-two-dimensional physical simulation. The model takes account of the tunnelling effects in the region of the gate metallization. A new thermal model monitors the channel temperature and controls the tunnelling mechanism. The effects of the substrate conduction on breakdown in HEMTs is highlighted. Experimental results are presented which confirm the physical interpretations of the numerical model.