Improving the Transient Thermal Characterization of GaN HEMTs
- Resource Type
- Conference
- Authors
- Pavlidis, Georges; Kendig, Dustin; Yates, Luke; Graham, Samuel
- Source
- 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2018 17th IEEE Intersociety Conference on. :208-213 May, 2018
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Temperature measurement
Gallium nitride
Logic gates
Light emitting diodes
Metals
Wavelength measurement
HEMTs
Transient Thermoreflectance
Temperature Mapping
Wide Bandgap Semiconductor
Electronics
Thermometry
Reliability
- Language
- ISSN
- 2577-0799
Transient thermoreflectance imaging (TTI) is a thermometry technique employed to map the surface temperature distribution of GaN HEMTs. The accuracy of the technique is dependent on applying the correct thermoreflectance coefficient to the region of interest on the device surface. TTI has shown high accuracy when measuring the temperature rise of metals such as Schottky contacts but the technique has never been verified when applied to semiconductors. Using UV LED excitation sources, TTI of the GaN channel in GaN/Si HEMTs is presented and verified for the first time via the comparison of the gate metal temperature. A pixel by pixel calibration method is implemented to improve the spatial accuracy and account for any variability in the thermoreflectance coefficient across the device. The improvements of TTI discussed in this study make the technique an accurate and effective method to measure the temperature distribution of both the gate metal and GaN.