Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM
- Resource Type
- Periodical
- Authors
- Panwar, N.; Ganguly, U.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(1):829-832 Jan, 2019
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Temperature measurement
Current measurement
Transient analysis
Switches
Resistance
Resistance heating
Pr₀.₇ Ca₀.₃ MnO₃ (PCMO)
resistive random access memory (RRAM)
self-heating
transient measurements
- Language
- ISSN
- 0018-9383
1557-9646
To understand the voltage–time dilemma in Pr 0.7 Ca 0.3 MnO 3 (PCMO)-based resistive random access memory, we present switching transient currents for 10 ns–1 s for both SET and RESET. Three stages are observed during SET: 1) fast current (