Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications
- Resource Type
- Periodical
- Authors
- Amendola, G.; Boccia, L.; Centurelli, F.; Chevalier, P.; Fonte, A.; Mustacchio, C.; Pallotta, A.; Tommasino, P.; Traversa, A.; Trifiletti, A.
- Source
- IEEE Transactions on Circuits and Systems II: Express Briefs IEEE Trans. Circuits Syst. II Circuits and Systems II: Express Briefs, IEEE Transactions on. 68(9):3098-3102 Sep, 2021
- Subject
- Components, Circuits, Devices and Systems
Receivers
Silicon germanium
BiCMOS integrated circuits
Gain
Mixers
Linearity
Attenuation
Backhaul
E-band
point to point communication
SiGe
wideband receiver front-end
- Language
- ISSN
- 1549-7747
1558-3791
The implementation of backhauling links poses several challenges to the designers which are requested to limit the hardware costs in the framework of complex millimeter wave radio systems. This work presents a monolithically integrated E-band I/Q receiver covering the whole bandwidth from 71 to 86 GHz. The chip was implemented in a 55 nm SiGe BiCMOS technology which allows reaching a high level of integration. The receiver is based on a Low Noise Amplifier (LNA) stage and a Variable-Gain Amplifier (VGA) which provide a −11 dBm IP1dB. A double balanced mixer provides I/Q baseband outputs through a reduced-size differential phase shifter which allows to contain the chip size to 1.8 mm 2 .