Modeling of threshold voltage for undoped surrounding gate MOSFET: A Gaussian approach
- Resource Type
- Conference
- Authors
- Palash Roy; Binit Syamal; Mohankumar, N.; Sarkar, C.K.
- Source
- 2009 4th International Conference on Computers and Devices for Communication (CODEC) Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on. :1-4 Dec, 2009
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Fields, Waves and Electromagnetics
Threshold voltage
MOSFET circuits
Poisson equations
CMOS technology
Argon
Silicon
Boundary conditions
Semiconductor films
Gaussian channels
Numerical simulation
Drain induced barrier lowering (DIBL)
Surrounding-Gate (SG)
Threshold voltage roll-off
- Language
We have developed analytically a threshold voltage model and explored the threshold voltage roll-off and drain-induced barrier lowering (DIBL) effects for undoped surrounding-gate (SG) MOSFETs. The model is derived by applying the Gauss Law by considering an elemental area of the channel rather than using Poisson equation as implemented earlier. For this threshold voltage model, the threshold voltage roll-off and DIBL effects have been analyzed and compared with 3-D numerical simulation results for different channel lengths, channel thickness and oxide thickness and a very good agreement between them has been observed.