Visible Light Sensitivity Enhancement of CMOS Image Sensor with Pseudo High Refractive Index Film Integrated by Directed Self-Assembly Process
- Resource Type
- Conference
- Authors
- Oshiyama, I.; Shigetoshi, T.; Mita, I.; Sumitani, N.; Oinoue, T.; Saito, S.; Okawa, T.; Ebiko, Y.; Yokochi, K.; Kitano, Y.; Hagimoto, Y.; Hirano, T.; Iwamoto, H.
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Reflectivity
Sensitivity
Self-assembly
Surface waves
Refractive index
Dark current
CMOS image sensors
- Language
We have developed a back-illuminated CMOS image sensor (BI -CIS) using a pseudo high refractive index film (pHRF) consisting of an array of minute holes. The new process architecture for the low reflectivity surface is achieved by integrating the directed self-assembly (DSA) process with the conventional process. This is the first report of an image sensor fabricated using the DSA process. The proposed sensor has low dark current and has enhanced sensitivity for wavelengths ranging from 400 nm to 550 nm.