Operation of field emitter arrays under high dose rate gamma-ray irradiation
- Resource Type
- Conference
- Authors
- Morito, Teruyuki; Handa, Yusuke; Gotoh, Yasuhito; Sato, Nobuhiro; Takagi, Ikuji; Nagao, Masayoshi; Akiyoshi, Masafumi; Okamoto, Tamotsu
- Source
- 2018 31st International Vacuum Nanoelectronics Conference (IVNC) Vacuum Nanoelectronics Conference (IVNC), 2018 31st International. :1-2 Jul, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Radiation effects
Logic gates
Gamma-rays
Anodes
Field emitter arrays
Sensor arrays
Image sensors
radiation tolerance
field emitter array
gamma-ray
image sensor
- Language
- ISSN
- 2380-6311
Robustness of field emitter arrays (FEA) against high dose rate gamma-ray irradiation was confirmed. The current-voltage characteristics of the FEA were investigated in a vacuum vessel developed for in situ measurements under the irradiation. Although slight increase of the gate current was observed under the irradiation, the insulating layer kept the electrical insulation. As a result, FEA showed the almost identical current-voltage characteristics under the 1.3 kGy h -1 gamma-ray irradiation.