0.5 /spl mu/m-thick /spl mu/c-Si solar cell grown by photo-CVD on highly textured SnO/sub 2/
- Resource Type
- Conference
- Authors
- Konagai, M.; Hiza, S.; Ohki, K.; Yamada, A.
- Source
- 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of Photovoltaic energy conference Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on. 2:1605-1610 Vol.2 2003
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Photovoltaic cells
Hydrogen
Substrates
Temperature
Semiconductor films
Amorphous materials
Crystallization
Glass
Conductive films
Optical surface waves
- Language
Microcrystalline silicon (/spl mu/c-Si) films and solar cells were prepared by mercury-sensitized photochemical vapor deposition (photo-CVD). The microstructures of the /spl mu/c-Si films on textured SnO/sub 2/ with different haze ratios (from 5% to 64%) were observed with a scanning electron microscope. The observation revealed that the grain boundary density of /spl mu/c-Si on SnO/sub 2/ with higher haze ratios was lower than that on SnO/sub 2/ with lower haze ratios. The effect of textured SnO/sub 2/ with different haze ratios on p-i-n /spl mu/c-Si cell characteristics was discussed and it was found that the optimal haze ratio was around 40%. The 0.6 /spl mu/m-thick /spl mu/c-Si cell on 36%-haze SnO/sub 2/ with a conversion efficiency of 7.3% was achieved.