Suppression of H2O absorption by hydrophobic-like surface of SiOx without Si-OH group
- Resource Type
- Conference
- Authors
- Ueda, Tetsuya; Kiso, Osamu; Abe, Shoji; Takezawa, Yasunari; Matsumaro, Kazuyuki; Suzuki, Chikashi; Toyama, Munehiro; Ogawa, Shinichi
- Source
- 2020 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC),2020 IEEE International. :100-102 Oct, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Signal Processing and Analysis
Water
Annealing
Absorption
Films
Conferences
SiO2
SiOx
TDS
Permittivity
Contact angle
Si-OH
H2O
Hydrophobic
- Language
- ISSN
- 2380-6338
A mechanism of H 2 O absorption into SiO x films for forming hydrophobic surfaces is experimentally studied with annealing at several temperatures followed by exposure to several environment conditions. A key requisite to suppress H 2 O absorption was found to be a hydrophobic-like surface of SiO x , which was formed by annealing above 700°C, which completely removes the Si-OH group. This result indicates the possibility to fabricate the completed SiO x films that almost prevent H 2 O absorption regardless of the air exposure time periods.