Use of RF-based technique as a metrology tool for TSV reliability analysis
- Resource Type
- Conference
- Authors
- Okoro, Chukwudi; Kabos, Pavel; Obrzut, Jan; Hummler, Klaus; Obeng, Yaw S.
- Source
- 2013 IEEE 63rd Electronic Components and Technology Conference Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd. :186-191 May, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Through-silicon vias
Reliability
Radio frequency
Thermal analysis
Silicon
Metals
Stress
- Language
- ISSN
- 0569-5503
2377-5726
In this work, radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in TSV daisy chains degraded with thermal cycling. Focused ion beam (FIB) based failure analysis, showed that the root cause for this trend was due to the formation and propagation of voids with thermal cycling.