Metrology for nanosystems and nanoelectronics reliability assessments
- Resource Type
- Conference
- Authors
- Obeng, Yaw S.; Okoro, Chukwudi A.; Kopanski, Joseph J.
- Source
- 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on. :1-5 Aug, 2012
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Materials reliability
Materials
Image resolution
Capacitors
CBCM
charge based capacitance measurement
interconnects
metrology techniques
nanoelectronics
reliability
three-dimensional integrated circuits
through silicon vias
TSVs
- Language
- ISSN
- 1944-9399
The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under development in our group at NIST. Among other topics, we will assess the techniques and models currently used for evaluating integrated circuit reliability, as well as present some new approaches.