Materials and device properties of ultra-thin 6.0 /spl Aring/ In/sub x/Al/sub 1-x/As graded buffer layers and HBTS
- Resource Type
- Conference
- Authors
- Sandhu, R.; Hayashi, S.; Noori, A.M.; Goorsky, M.; Cavus, A.; Monier, C.; Lange, M.; Gutierrez-Aitken, A.
- Source
- International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :86-89 2005
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Buffer layers
Heterojunction bipolar transistors
Capacitive sensors
Indium phosphide
Thermal resistance
Indium compounds
Rough surfaces
Surface roughness
Material properties
Temperature
- Language
- ISSN
- 1092-8669
The rapid kinetics of strain relaxation in In/sub x/Al/sub 1-x/As graded buffer layers (GBLs) was exploited to produce thin (0.21 /spl mu/m-0.90 /spl mu/m) buffer layers graded from the InP substrate to 6.0 /spl Aring/. The layers were fully relaxed, with a cross-hatched surface roughness of 4 nm, and threading dislocation densities of about 10/sup 8/ cm/sup -2/ for the thinnest buffer and 10/sup 6/ cm/sup -2/ for the 0.45 and 0.90 /spl mu/m GBL structures. Identical HBT structures were grown on each of these buffers. The current gain was at least 60 with low reverse leakage currents.