Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and Turn-on Switching Loss Tradeoff
- Resource Type
- Conference
- Authors
- Konishi, Kazuya; Nishi, Koichi; Sako, Kohei; Furukawa, Akihiko
- Source
- 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :273-276 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Insulated gate bipolar transistors
Integrated circuits
Electrodes
Switching loss
Logic gates
Capacitance
Power semiconductor devices
IGBT
CSTBT
Gate capacitance
Split-gate
Recovery dV/dt
Turn-on switching loss
- Language
- ISSN
- 1946-0201
IGBTs have the special trade-off between recovery dV/dt and turn-on switching loss. In this study, we propose the split-dummy-active CSTBT™ with the intentionally increased gate-collector capacitance for the first time, and experimentally demonstrate its impact on the trade-off. The proposed structure successfully realized advanced improvement in the trade-off by 46%.