Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications
- Resource Type
- Conference
- Authors
- Nauenheim, C.; Kugeler, C.; Rudiger, A.; Waser, R.; Flocke, A.; Noll, T. G.
- Source
- 2008 8th IEEE Conference on Nanotechnology Nanotechnology, 2008. NANO '08. 8th IEEE Conference on. :464-467 Aug, 2008
- Subject
- Components, Circuits, Devices and Systems
Electrodes
Resistance
Switches
Conductors
Titanium
Materials
Junctions
- Language
- ISSN
- 1944-9399
We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO 2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.