Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Resource Type
- Conference
- Authors
- Wu, E.; Kim, A.; Ando, T.; Muralidhar, R.; Li, B.; Southwick, R.; Jamison, P.; Shaw, T.; Stathis, J.; Bonilla, G.
- Source
- 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :21.5.1-21.5.4 Dec, 2017
- Subject
- Components, Circuits, Devices and Systems
Acceleration
Data models
Dielectrics
Analytical models
Reliability
Hafnium compounds
Stress
Clustering model
power-law model
RRAM
- Language
- ISSN
- 2156-017X
Two important engines lie at the heart of dielectric reliability assessment and prediction methodologies: a statistical distribution model and a field/voltage acceleration model for data parameter extraction and reliability projection. The Weibull/ Poisson model and constant field-acceleration E-model are useful for more-or-less ideal situations, but new applications and experimental findings have challenged and exposed the fundamental limitations of these decades-old models. The time-dependent clustering model and power-law field/voltage models have emerged as promising solutions to meet these new challenges in a wide range of applications from dielectric breakdown (BD) statistics in BEOL/ MOL/FEOL cases to Reset/Set statistics of RRAM operations. Recent advances in atomistic simulation and microscopic modeling provide fresh insights for the correct choice of field/voltage acceleration models.