A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
- Resource Type
- Conference
- Authors
- Endo, M.; Numata, S.; Ohshima, K.; Egi, Y.; Isaka, F.; Ohno, T.; Tezuka, S.; Hamada, T.; Furutani, K.; Tsuda, K.; Matsuzaki, T.; Onuki, T.; Murakawa, T.; Kunitake, H.; Kobayashi, M.; Yamazaki, S.
- Source
- 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :6.6.1-6.6.4 Dec, 2022
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Voltage measurement
Nonvolatile memory
Ferroelectric films
Capacitors
Field effect transistors
Random access memory
Size measurement
- Language
- ISSN
- 2156-017X
We fabricated a ferroelectric random access memory (FeRAM) using an oxide semiconductor field-effect transistor (OSFET) and a HfO 2 -based ferroelectric capacitor by utilizing a high breakdown voltage of the OSFET even with a scaled gate length, and examined memory size reduction. Fabricating a bottom electrode by a damascene process eliminated leakage and endurance issues at the capacitor edge. The fabricated FeRAM has a 1T1C configuration including the $0.06- \mu m^{2}$ miniaturized capacitor. This memory has nonvolatility and reliability comparable to those of the memories in the prior arts and achieves high-speed operation and power supply voltage reduction.