Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias
- Resource Type
- Conference
- Authors
- Movaghar, Ghazal; Liu, Junqian; Dalton, James; Valenzuela, Luis A.; Schow, Clint L.; Buckwalter, James F.
- Source
- 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2022 IEEE. :132-135 Oct, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Integrated optics
Optical device fabrication
Bandwidth
Packaging
BiCMOS integrated circuits
Optical receivers
Through-silicon vias
through-silicon via
TSV
silicon-germanium packaging
optical receiver
64 Gbps
- Language
- ISSN
- 2831-4999
This paper provides a comparative study of packaging features of a high-speed silicon-germanium (SiGe) integrated circuit (IC). Two variants of a 64-Gb/s optical receiver (ORX) were fabricated in a 130-nm BiCMOS process, one including through-silicon vias (TSVs) for ground connections and one required wirebonds for ground connections. The role of TSVs is simulated for improved bandwidth at each stage by investigating added parasitic components in a specific packaging scheme as well as thermal performance. The TSV is shown to offer 25% more eye opening at 64 Gbps and 2 orders of magnitude improvement in bit-error rate (BER).