Recent Advances on Electromigration in Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D Integrated Circuits
- Resource Type
- Conference
- Authors
- Moreau, S.; Bouchu, D.; Jourdon, J.; Ayoub, B.; Lhostis, S.; Fremont, H.; Lamontagne, P.
- Source
- 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-7 Mar, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Electromigration
Resistance
Degradation
Three-dimensional displays
Integrated circuit interconnections
Bonding
Integrated circuit reliability
3D integration
hybrid bonding
interconnects
reliability
failure mode
electromigration
- Language
- ISSN
- 1938-1891
With hybrid bonding (HB) pitch reduction, many challenges are arising. One of them is related to the reliability of HB-based interconnects and in particular their electromigration performances as electromigration (EM)-related degradation is intimately linked to the electrical current in addition to temperature and mechanical stresses. This study highlights a change in the failure modes for EM-related failures in HB-based interconnects when decreasing the interconnect pitch from 6.84 down to 1.44 µm. The weakest link moves from the BEOL levels to hybrid bonding ones but without affecting the projected performance under use conditions. Additional studies done on design aspects do not evidence any negative impact on the electro migration resistance of the HB brick.