Test system for Charge Collection Efficiency measurement (SYCOC) for neutron irradiated silicon sensors
- Resource Type
- Conference
- Authors
- Yee, L. Soung; Pin, A.; Militaru, O.; Cortina, E.; de Callatay, B.; Cabrera, J.; Michotte, D.
- Source
- 2011 2nd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2011 2nd International Conference on. :1-3 Jun, 2011
- Subject
- Nuclear Engineering
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Detectors
Silicon
Semiconductor lasers
Laser excitation
Measurement by laser beam
Temperature sensors
- Language
One of the constraints in using standard FloatZone silicon layer as base material for tracking in particle physics is its radiation hardness. The detection efficiency is degraded by the introduction of defects in the silicon crystal and charge trapping becomes the main problem. The Charge Collection Efficiency (CCE) is a relevant parameter in order to determine the detection performance of such devices. A state-of-the-art test system named “Système de mesure de collection de charge” (SYCOC) has been developed for the characterization of diode and microstrip silicon sensors before and after irradiation. The system is designed to perform Charge Collection Efficiency (CCE) and Transient Current Technique (TCT) measurements with laser and radioactive sources in a controlled environment. Initial measurements on diodes are presented.