Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress
- Resource Type
- Conference
- Authors
- Shen, Chengjun; Jahdi, Saeed; Yang, Juefei; Alatise, Olayiwola; Ortiz-Gonzalez, Jose; Mellor, Phil
- Source
- 2022 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2022 IEEE. :1-7 Oct, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Temperature measurement
Schottky diodes
Temperature distribution
Silicon carbide
PIN photodiodes
Current measurement
Energy measurement
Silicon Carbide (SiC)
Junction Barrier Schottky
Merged PiN Schottky
Avalanche
Surge Current
- Language
- ISSN
- 2329-3748
A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.