(Ag,Cu)(In,Ga)Se 2 thin-films with bandgap 1.3 – 1.6 eV were deposited by three-stage elemental co-evaporation and the group I-rich growth in the second stage of the process was characterized. By interrupting the three-stage growth at the end of the second stage, films were obtained with surface layers of Ag-Cu-Se compounds and underlying chalcopyrite (Ag,Cu)(In,Ga)Se 2 layers. Composition measurements and depth profiles showed higher Ag/(Ag+Cu) ratio in the Ag-Cu-Se layers than in the underlying chalcopyrite. Plan-view images from scanning electron microscope suggested that Ag-Cu-Se was present in a liquid phase at reaction temperature during the second stage and that its morphology was different than the corresponding Cu 2 Se and Cu 2−x Se phases from a Cu(In,Ga)Se 2 deposition. Glancing incidence x-ray diffraction measurements identified Cu 2 Se, CuAgSe, Cu 0.5 Ag 1.5 Se and Ag 2 Se possible phases.