50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform
- Resource Type
- Conference
- Authors
- Hiraki, Tatsurou; Aihara, Takuma; Maeda, Yoshiho; Fujii, Takuro; Tsuchizawa, Tai; Takahata, Kiyoto; Kakitsuka, Takaaki; Matsuo, Shinji
- Source
- 2020 European Conference on Optical Communications (ECOC) Optical Communications (ECOC), 2020 European Conference on. :1-4 Dec, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Optical losses
Optical device fabrication
Bandwidth
Silicon
Transceivers
Optical modulation
P-i-n diodes
- Language
A 300-µm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.