A DC to 4GHz Limiter Based in a 0.5um GaAs pHEMT Process
- Resource Type
- Conference
- Authors
- Han, Lei; Lv, Jinjie; Li, Shengqi; Su, Guo-Dong; You, Bin; Liu, Jun
- Source
- 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2022 IEEE MTT-S International Microwave Workshop Series on. :1-3 Nov, 2022
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Robotics and Control Systems
Signal Processing and Analysis
Radio frequency
Semiconductor device measurement
Limiting
Gallium arsenide
PHEMTs
Routing
Loss measurement
Limiter
PIN diode
GaAs
pHEMT
- Language
- ISSN
- 2694-2992
A DC-4GHz limiter is presented in this paper. The anti-parallel diode structure is employed as the core unit of the limiter. The second stage is designed further to limit the power leaked from the previous stage. Snake-shape line is used in the layout routing to reduce the area of the proposed limiter. The limiter is designed and fabricated in a 0.5 μm GaAs process. The measurement results show that the small signal insertion loss is of -0.1dB and the input/output return loss are both less than -20dB in the operating frequency band. The chip area is 1.12mm*0.7mm.