Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences
- Resource Type
- Conference
- Authors
- Heimler, Patrick; Alaluss, Mohamed; Schwabe, Christian; Liu, Xing; Lutz, Josef; Basler, Thomas
- Source
- 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-10 Sep, 2023
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Temperature measurement
Degradation
Temperature dependence
Voltage measurement
Power measurement
Wires
Europe
«Power Cycling»
«SiC MOSFET»
«Discrete Power Device»
«Reliability»
«Threshold voltage instability»
«Threshold voltage shift»
- Language
In this paper, the threshold voltage shift during power cycling test for discrete SiC-MOSFET devices in TO-247 package from three different manufacturers with the same blocking capability of 1200 V is investigated. The temperature dependence of the threshold voltage plays a significant role in the interpretation of the results, since a change in V th can also influence common TSEP (temperature-sensitive electrical parameter) measurement methods. The tested devices have shown no deterioration of the solder layer, but degradation of the bond wires in the failure analysis.