A Self-Resonant MEMS-based Electrostatic Field Sensor with 4V/m/Hz Sensitivity
- Resource Type
- Conference
- Authors
- Denison, T.; Jinbo Kuang; Shafran, J.; Judy, M.; Lundberg, K.
- Source
- 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International. :1121-1130 2006
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Electrostatics
Micromechanical devices
Resonance
Geophysical measurements
Circuits
Sensor arrays
Force sensors
Resonant frequency
Voltage
Feedback
- Language
- ISSN
- 0193-6530
2376-8606
An electric-field sensor is presented for applications such as xerography. The sensor architecture combines a vibrating MEMS structure with synchronous detection-based electronics. Prototyped in a MEMS process, the noise floor is 4.0V/m/radicHz and the INL is 20V/m over a range of +/-700kV/m, an order-of-magnitude improvement over existing MEMS devices