Comparison of Metallic NW and Evaporated Contact for THz Detector Modules Based on an InGaAs Schottky diode
- Resource Type
- Conference
- Authors
- Hajo, Ahid S.; Yilmazoglu, Oktay; Lu, Suwei; Kuppers, Franko; Kussorow, Thomas
- Source
- 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2019 44th International Conference on. :1-2 Sep, 2019
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Schottky diodes
Detectors
Antennas
Indium gallium arsenide
Capacitance
Cutoff frequency
Schottky barriers
- Language
- ISSN
- 2162-2035
In this paper we report a new terahertz (THz) Schottky detector module based on vertically contacted highly doped (1 x 10 18 cm -3 ) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact and a standard evaporated contact (SD). These Schottky diodes were placed on a silicon lens and integrated with a preamplifier on a printed circuit board (PCB). Furthermore, three different antennas for this detector module were investigated.