Impact of Stopping Voltage and Hopping Conduction on the Oxygen Vacancy Concentration of Multi-Level HfO2-Based Resistive Switching Devices
- Resource Type
- Conference
- Authors
- Loy, Desmond Jia Jun; Dananjaya, Putu Andhita; Chakrabarti, Somsubhra; Tan, Kuan Hong; Chow, Samuel Chen Wai; Chee, Mun Yin; Thong, Jia Rui; Hou, Kunqi; Ang, Jia Min; Lim, Gerard Joseph; Ee, Yong Chiang; Toh, Eng Huat; Lew, Wen Siang
- Source
- 2020 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2020 IEEE. :91-92 Jun, 2020
- Subject
- Components, Circuits, Devices and Systems
Resistance
Electron traps
Temperature distribution
Oxygen
Fitting
Switches
Voltage
RRAM
HfO2
multi-level states
filament evolution
hopping conduction
- Language
- ISSN
- 2161-4644
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hopping conduction fittings also indicated a depletion of n c due to an increase of V stop as shown by an increase of trap-to-trap distance (a) and trap energy (ϕ T ).