Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell
- Resource Type
- Conference
- Authors
- Stromberg, A.; Manavaimaran, B.; Srinivasan, L.; Lourdudoss, S.; Sun, Y.T.
- Source
- 2022 Compound Semiconductor Week (CSW) Compound Semiconductor Week (CSW), 2022. :1-2 Jun, 2022
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Costs
Photovoltaic cells
Crystals
Photoluminescence
Silicon
Epitaxial growth
Compounds
epitaxial lateral overgrowth
GaAsP/Si
hydride vapor phase epitaxy
- Language
High crystal quality GaAsP/Si fabricated by cost effective heteroepitaxial technology is promising to realize low-cost Si based tandem solar cell with efficiency higher than 30%. In this work, epitaxial lateral overgrowth (ELOG) of GaAsP/GaAs and GaAsP/GaAs/Si by hydride vapor phase epitaxy (HVPE) and their properties are studied by photoluminescence (PL) mapping. High crystal quality ELOG GaAsP/Si is obtained with enhanced PL intensity and narrow line width indicating reduced defect density provided by ELOG approach.