First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
- Resource Type
- Conference
- Source
- 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :47-48 Jun, 2018
- Subject
Components, Circuits, Devices and Systems MOSFET circuits Iron Annealing Indium gallium arsenide Logic gates MOSFET Silicon - Language
- ISSN
- 2158-9682