A novel low loss LIGBT with p-type buried layer (PLB-LIGBT) is proposed. The PLB-LIGBT features an emitter trench as well as a p-type long buried (PLB) layer inserted in the n-drift region. The proposed structure not only reduces the on-state voltage drop $(V_{\text{ceon}})$, but also reduces the turn-off loss $(E_{\text{off}})$ without sacrificing the breakdown voltage $(BV)$. Simulation results show that the $V_{\text{ceon}}$ is reduced by 9.5% when compared with the LIGBT with carrier stored (CS) layer (CS-LIGBT), PLB-LIGBT exhibits a 9.5% decrease in $V_{\text{ceon}}$, a 59.8% reduction in turn-off time $(t_{\text{off}})$, a 65% decrease in $E_{\text{off}}$, and a 16.5% improvement in $BV$.