L-Band LiNbO3/SiO2/Sapphire Longitudinal Leaky Saw (LLSAW) Resonators with High Figure of Merit
- Resource Type
- Conference
- Authors
- Lee, Zhi-Qiang; Hsu, Tzu-Hsuan; Tsai, Chia-Hsien; Lin, Cheng-Chien; Yu, Ya-Ching; Tung, Shao-Siang; Li, Ming-Huang
- Source
- 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) Micro Electro Mechanical Systems (MEMS), 2024 IEEE 37th International Conference on. :1095-1098 Jan, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Performance evaluation
Silicon compounds
Surface acoustic waves
Surface acoustic wave devices
Resonators
L-band
Substrates
Longitudinal Leaky SAW (LLSAW)
lithium niobate on sapphire (LNOS)
high figure of merit (FoM)
piezoelectric resonator
- Language
- ISSN
- 2160-1968
This work presents a set of high performance longitudinal leaky surface acoustic wave (LLSAW) resonators based on lithium niobate LN/SiO 2 /Sapphire (LNOS) characterized by a larger phase velocity. The LLSAW resonators on the proposed LNOS platform results a remarkable 9-fold improvement the figure of merit compared to the identical devices on LN/SiO 2 /Silicon platform. As a result, the LLSAW resonators demonstrated both a high-quality factor (Q max > 1010) and a large electromechanical coupling coefficient $\left( {k_{{\text{eff}}}^2 > 14.3\% } \right)$ which yielding a figure-of-merit $\left( {{\text{FoM}} = k_{{\text{eff}}}^2 \cdot {Q_{\max }}} \right)$ exceeding 145 for the first time in L-band region. These findings showcase a highly competitive performance compared to state-of-art thin film LLSAW resonators.