Importance of Long-lifetime n-GaInP for High-efficiency GaInP Solar Cells Grown by MBE
- Resource Type
- Conference
- Authors
- Sun, Yukun; Li, Brian D.; Hool, Ryan D.; Fan, Shizhao; Kim, Mijung; Lee, Minjoo Larry
- Source
- 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2020 47th IEEE. :0011-0013 Jun, 2020
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Molecular beam epitaxial growth
Degradation
Annealing
Doping
DH-HEMTs
Sun
GaInP
MBE
double-hetero structures
rapid thermal annealing
- Language
We present a systematic photoluminescence (PL) study on the effects of doping and rapid thermal annealing (RTA) conditions on n- and p-GaInP double-heterostructures (DHs) grown by molecular beam epitaxy (MBE). The steady-state photoluminescence (SSPL) intensity of lightly doped n- and p-GaInP both improve significantly after RTA, while in contrast, heavily doped n-GaInP degrades sharply with RTA. Front-junction (FJ) GaInP cells with this heavily doped $n$-GaInP emitter were severely damaged after RTA, as expected. Replacing the emitter with lightly doped $n$-GaInP may help to alleviate the degradation and lead to improved MBE-grown GaInP solar cells.