Edge Termination Structures for 3.3 kV 4H-SiC Devices
- Resource Type
- Conference
- Authors
- Dong, Bi-Fan; Lee, Kung-Yen; Lai, Yun-Kai; Tzou, Chen-Dong; Hsu, Chih-Chao; Chen, Yi-Ting
- Source
- 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2020 IEEE Workshop on. :1-4 Sep, 2020
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Sensitivity
Photonic band gap
Simulation
Asia
Implants
Junctions
Electric fields
edge termination (ET)
4H-SiC
ring-assisted double-zone junction termination extension (RA-DZ-JTE)
breakdown voltage (BV)
- Language
In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition.