Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
- Resource Type
- Conference
- Authors
- Porret, C.; Everaert, J.-L.; Schaekers, M.; Ragnarsson, L.-A.; Hikavyy, A.; Rosseel, E.; Rengo, G.; Loo, R.; Khazaka, R.; Givens, M.; Piao, X.; Mertens, S.; Heylen, N.; Mertens, H.; De Carvalho Cavalcante, C. Toledo; Sterckx, G.; Brus, S.; Mehta, A. Nalin; Korytov, M.; Batuk, D.; Favia, P.; Langer, R.; Pourtois, G.; Swerts, J.; Litta, E. Dentoni; Horiguchi, N.
- Source
- 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :34.1.1-34.1.4 Dec, 2022
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Fabrication
Temperature sensors
Annealing
Temperature
Metals
Doping
Conductivity
- Language
- ISSN
- 2156-017X
Low temperature Si 1-x Ge x source-drain epitaxy processes are associated with exploratory contact metals to identify stacks alleviating access resistance issues in modern logic devices. TiN/W metal-to-metal interfaces featuring contact resistivities