The dependence of optical and electrical properties of GaN nanowires on the growth temperature Paper #NA003
- Resource Type
- Conference
- Authors
- Talin, A. Alec; Wang, George T.; Lai, Elaine; Anderson, Richard J.
- Source
- 2008 17th IEEE International Symposium on the Applications of Ferroelectrics Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the. 2:1-3 Feb, 2008
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Gallium nitride
Nanowires
Temperature dependence
Optical films
Substrates
Luminescence
Conductivity
Crystallization
Plasma temperature
Integrated optics
- Language
- ISSN
- 1099-4734
2375-0448
The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800°C to 900°C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~10 7 ohm-cm to ~10 -3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.