A new approach to achieve Gunn effect for GaN based THz sources with high power
- Resource Type
- Conference
- Authors
- Hajo, Ahid S.; Yilmazoglu, Oktay; Samodi, Boraq; Dadgar, Armin; Kuppers, Franko; Kussorow, Thomas
- Source
- 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2019 44th International Conference on. :1-2 Sep, 2019
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Gallium nitride
Gallium arsenide
Voltage measurement
Power generation
Fabrication
Contacts
Passivation
- Language
- ISSN
- 2162-2035
For the first time, Gunn effect is shown using a side-contact (SC) technology. Our THz Gunn source is based on 2 $\mu$ m thick gallium nitride (GaN) with stable operation up to 22 V due to better heat sink and side contact technology. A diode current of about 1 A was achieved for high output power.