Reduction of charging damage of gate oxide by time modulation bias method
- Resource Type
- Conference
- Authors
- Ono, T.; Oomoto, Y.; Mizutani, T.; Yoshioka, K.; Ogawa, Y.; Kofuji, N.; Izawa, M.; Goto, Y.; Kure, T.
- Source
- 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Plasma process-induced damage Plasma Process-Induced Damage, 1999 4th International Symposium on. :167-170 1999
- Subject
- Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Nuclear Engineering
Radio frequency
Etching
Pulse modulation
Plasma accelerators
Plasma applications
Optical pulses
Radio control
Acceleration
Electron optics
Particle beam optics
- Language
The charging damage of gate oxide films caused during plasma etching is reduced by the time modulation (TM) bias method. The radio frequency (RF) bias applied to the substrate is pulse modulated to control the energy and the quantity of accelerated ions. The charging potential of line patterns caused by the electron shading effect decreases during off periods of RF bias. In addition, the emission intensity signal of the optical endpoint monitor indicates suppression of reactive ion etching (RIE) lag. These factors result in the reduction of charging damage.