0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer
- Resource Type
- Conference
- Authors
- Ozdemir, Cenk Ibrahim; de Koninck, Yannick; Yudistira, Didit; Kuznetsova, Nadezda; Baryshnikova, Marina; van Thourhout, Dries; Kunert, Bernardette; Pantouvaki, Marianna; van Campenhout, Joris
- Source
- 2020 European Conference on Optical Communications (ECOC) Optical Communications (ECOC), 2020 European Conference on. :1-4 Dec, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
PIN photodiodes
Dark current
Silicon
Photodetectors
Nanoscale devices
Optical waveguides
Plugs
- Language
We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA ($1.36\times 10^{-7}A/cm^{2}$) at −1 V bias and internal responsivities of 0.65A/W at 1020nm wavelength.